| PART |
Description |
Maker |
| PTF10120 |
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦，1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10065 |
30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10112 |
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10048 |
30 Watts, 2.1.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
| PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| ST083S10PFH2PBF ST083S04PCN1PBF ST083S08PCN1L ST08 |
135 A, 1000 V, SCR, TO-208AD
135 A, 400 V, SCR, TO-209AC
135 A, 800 V, SCR, TO-209AC
135 A, 1200 V, SCR, TO-209AC
|
|
| PE6809-16 |
0.5 Watts Low Power Precision WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
